EPR and ab initio calculation study on the EI4 center in 4H and 6H-SiC
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چکیده
منابع مشابه
The carbon vacancy related EI4 defect in 4H-SiC
Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at ~750°C. Additional large-splitting Si hyperfine (hf) lines and also other C and Si hf structures were observed. Based on the observed hf structures and ann...
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